Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers

Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers

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Current injection efficiency of InGaAsN quantum-well lasers

The concept of below-threshold and above-threshold current injection efficiency of quantum well sQWd lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200 nm emitting InGaAs and 1300 nm emitting InGaAsN QW lasers. The role of heavy-hole leakage in the InGaAsN QW lasers is shown to be significant in determining the device temperature sensitivity....

Electron transport in AlGaInP quantum well lasers

Energy storage in quantum-well lasers.

A new scheme of energy storage in single-quantum-well semiconductor lasers is analyzed. This scheme involves the storage of the majority of injected carriers in the continuum states of the surrounding bulk material, in which the carrier density is diluted and the higher-order carrier-density-dependent recombination processes are much smaller. This allows the inversion level to build up to a muc...

Two-dimensional simulation of quantum well lasers

We describe a two-dimensional model for quantum-well lasers that solves self-consistently the electrical and optical equations. The model includes a wavelengthand position-dependent gain function which is derived from a quantum-mechanical calculation. We have also incorporated the effects of strain into the model, through an anisotropic parabolic band approximation of the band structure from a ...